- M. Inayoshi, M. Hori, T. Goto, M. Hiramatsu, M. Nawate, and S. Hattori
Formation of Polytetrafluoroethylene Thin Films by Using CO2 Laser Evaporation and XeCl Laser Ablation
Journal of Vacuum Science Technology A, Vol. 14 (4) (Jul/Aug, 1996) pp. 1981-1985,
DOI: 10.1116/1.580071
- Y. Yamamoto, M. Hori, T. Goto, and M. Hiramatsu
Behavior of Si atoms in a silane electron cyclotron resonance plasma at high dissociations
Journal of Vacuum Science Technology A, Vol. 14 (4) (Jul/Aug, 1996) pp. 1999-2003,
DOI: 10.1116/1.580074
- K. Takahashi, M. Hori, and T. Goto
Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma I. O2 addition to electron cyclotron resonance plasma employing CHF3
Journal of Vacuum Science Technology A, Vol. 14 (4) (Jul/Aug, 1996) pp. 2004-2010,
DOI: 10.1116/1.580075
- K. Takahashi, M. Hori, and T. Goto
Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma II. H2 addition to electron cyclotron resonance plasma employing CHF3
Journal of Vacuum Science Technology A, Vol. 14 (4) (Jul/Aug, 1996) pp. 2011-2019,
DOI: 10.1116/1.580076
- K. Miyata, M. Hori, and T. Goto
CFx radical generation by plasma interaction with fluorocarbon films on the reactor wall
Journal of Vacuum Science Technology A, Vol. 14 (4) (Jul/Aug, 1996) pp. 2083-2087,
DOI: 10.1116/1.580084
- K. Miyata, M. Hori, and T. Goto
Infrared Diode Laser Absorption Spectroscopy Measurements of CFx(x=1-3) Radical Densities in Electron Cyclotron Resonance Plasmas Employing C4F8, C2F6, and CHF3 Gases
Journal of Vacuum Science Technology A, Vol. 14 (4) (Jul/Aug, 1996) pp. 2343-2350,
DOI: 10.1116/1.580020
- T. Fujii, T. Yokoi, M. Hiramatsu, M. Nawata, M. Hori, T. Goto, and S. Hattori
Preparation of Polysiloxane Thin Films Using CO2 Laser Evaporation by Remote Radical Source
Journal of Vacuum Science Technology A, Vol. 14 (5) (Sep/Oct, 1996) pp. 2849-2853,
DOI: 10.1116/1.580234
- M. Hiramatsu, M. Inayoshi, K. Yamada, E. Mizuno, M. Nawata, M. Ikeda, M. Hori, and T. Goto
Hydrogen Radical Assisted Radio-Frequency Plasma Enhanced Chemical Vapor Deposition System for Diamond Formation
Reviews on Scientific Instruments, Vol. 67 (6) (March, 1996) pp. 2360-2356,
DOI: 10.1063/1.1146946
- H. Nomura, A. Kono, and T. Goto
Dilution-Gas Effect on the Electron Density and Temperature in an RF SiH4 Plasma Based on Microwave Cavity Resonance Measurement
Japanese Journal of Applied Physics, Vol. 35 (6A) (June, 1996) pp. 3603-3608,
DOI: 10.1143/JJAP.35.3603
- K. Takahashi, M. Inayoshi, M. Hori, and T. Goto
Evaluation of CF2 Radical as a Precursor for Fluorocarbon Film Formation in Highly Selective SiO2 Etching Process Using Radical Injection Technique
Japanese Journal of Applied Physics, Vol. 35 (6A) (June, 1996) pp. 3635-3641,
DOI: 10.1143/JJAP.35.3635
- K. Maruyama, K. Ohkouchi, and T. Goto
Kinetics of CFx (x=1-3) Radicals and Electrons in RF CF4-H2, CHF3-H2 and CHF3-O2 Plasmas
Japanese Journal of Applied Physics, Vol. 35 (7A) (July, 1996) pp. 4088-4095,
DOI: 10.1143/JJAP.35.4088
- M. Ikeda, E. Mizuno, M. Hori, T. Goto, K. Yamada, M. Hiramatsu, and M. Nawata
Diamond Film Formation by OH Radical Injection from Remote Microwave H2/H2O Plasma into Parallel-Plate RF Methanol Plasma
Japanese Journal of Applied Physics, Vol. 35 (9A) (September, 1996) pp. 4826-4832,
DOI: 10.1143/JJAP.35.4826
- T. Goto, and M. Hori
Radical Behavior in Fluorocarbon Plasma and Control of Silicon Oxide Etching by Injection of Radicals
Japanese Journal of Applied Physics, Vol. 35 (12B) (December. 1996) pp. 6521-6527,
DOI: 10.1143/JJAP.35.6521
- S. Den, T. Kuno, M. Ito, M. Hori, T. Goto, Y. Hayashi, and Y. Sakamoto
Diagnostics of Fluorocarbon Radicals in a Large-area Permanent Magnet Electron Cyclotron Resonance Etching Plasma
Japanese Journal of Applied Physics, Vol. 35 (12B) (December, 1996) pp. 6528-6533,
DOI: 10.1143/JJAP.35.6528
- T. Goto
Measurements of CFx and SiHx Radicals in ECR and RF Plasmas Used for Material Processing
Pure and Applied Chemistry, Vol. 68 (5) (January, 1996) pp. 1059-1063,
DOI: 10.1351/pac199668051059