- S. Takashima, M. Hori, and T. Goto
Vacuum Ultraviolet Absorption Spectroscopy Employing a Microdiacharge Hollow-Cathode Lamp for Absolute Density Measurment of Hydrogen Atoms in Reactive Plasma
Applied Physics Letters, Vol. 75 (25) (December 20, 1999) pp. 3929-3931,
DOI: 10.1063/1.125497
- R. Nozawa, H. Takeda, M. Ito, M. Hori, and T. Goto
In situ observation of hydrogenated amorphous silicon surfaces in electron cyclotron resonance hydrogen plasma annealing
Journal of Applied Physics, Vol. 85 (2) (January 15, 1999) pp. 1172-1177,
DOI: 10.1063/1.369242
- M. Inayoshi, M. Ito, M. Hori, and T. Goto
Formation and Micromachining of Teflon (Fluorocarbon Polymer) Film by a Completely Dry Process Using Synchrotron Radiation
Journal of Vacuum Science Technology B, Vol. 17 (3) (June, 1999) pp. 949-956,
DOI: 10.1116/1.590676
- K. Fujita, M. Ito, M. Hori, and T. Goto
Novel Process for SiO2/Si Selective Etching Using A Novel Gas Source for Preventing Global Warming
Journal of Vacuum Science Technology B, Vol. 17 (3) (June, 1999) pp. 957-960,
DOI: 10.1116/1.590676
- Kazuya Murata, Masafumi Ito, Masaru Hori, and Toshio Goto
Control of seed layer for a low temperature formation of polycrystalline silicon with high crystallinity and a smooth surface
Journal of Vacuum Science Technology B, Vol. 17 (3) (June, 1999) pp. 1098-1100,
DOI: 10.1116/1.590702
- R. Nozawa, K. Murata, M. Ito, and T. Goto
Low Temperature Polcrystalline Sillicon Film Formation with and without Charged Species in an Electron Cyclotron Resonance SiH4/H2 Plasma-Enhanced Chemical Vapor Deposition
Journal of Vacuum Science Technology A, Vol. 17 (5) (September, 1999) pp. 2542-2545,
DOI: 10.1116/1.581994
- K. Fujita, M. Ito, M. Hori, and T. Goto
Silicon Oxide Selective Etching Process Keeping Harmony with Enviroment by Using Radical Injection Technique
Journal of Vacuum Science Technology A, Vol. 17 (6) (November, 1999) pp. 3260-3264,
DOI: 10.1116/1.582052
- K. Fujita, M. Ito, M. Hori, and T. Goto
Silicon Oxide Selective Etching Process Keeping Harmony with Enviroment by Using Radical Injection Technique
Journal of Vacuum Science Technology A, Vol. 17 (6) (November, 1999) pp. 3260-3264,
DOI: 10.1116/1.582052
- A. Kono, S. Hirose, T. Goto
CW laser-induced fluorescence study of SiH2+SiH4 reaction: Dominance of two-body reaction channel in low-pressure silane plasma
Japanese Journal of Applied Physics, Vol. 38 (7B) (July, 1999) pp. 4389-4392,
DOI: 10.1143/JJAP.38.4389
- K. Ito, K. Teii, M. Ishikawa, M. Ito, M. Hori, T. Takeo, T. Kato, and T. Goto
Diamond deposition and behavior of atomic carbon species in a low-pressure inductively coupled plasma
Japanese Journal of Applied Physics, Vol. 38 (7B) (July, 1999) pp. 4504-4507,
DOI: 10.1143/JJAP.38.4504
- M. Nakamura, H. Nakayama, M. Ito, M. Hori, A. Kono, and T. Goto
Spatial Distribution Measurement of Absolute Densities of CF and CF 2 Radicals in a High Density Plasma Reactor Using a Combination of Single-Path Infrared Diode Laser Absorption Spectroscopy and Laser-Induced Fluorescence Technique
Japanese Journal of Applied Physics, Vol. 38 (12A) (December 1, 1999) pp. L1469-L1471,
DOI: 10.1143/JJAP.38.L1469
- M. Hori, T. Goto, R. G. Woodham, and H. Ahmed
Control Over Size and Density of Sub-5nm Gold Dots by Retarding-Field Single Ion Deposition (RSID)
Micoelectronics Engineering, Vol. 47 (1-4) (June, 1999) pp. 401-403,
DOI: 10.1016/S0167-9317(99)00244-0
- K. Fujita, S. Kobayashi, M. Ito, M. Hori, and T. Goto
Environmentally harmonious etching process for cleaning amorphous silicon and tungsten in chemical vapor deposition chamber
Material Science in Semiconductor Processing, Vol. 2 (3) (October, 1999) pp. 219-223,
DOI: 10.1016/S1369-8001(99)00030-X
- B. Mebarki, S. Sumiya, R. Yoshida, M. Ito, M. Hori, T. Goto, S. Samukawa, and T. Tsukada
Polysrystalline Sillicon Film Formation at Low Tempereture using Ultra-High-Frequency Plasma Enhanced Chemical Vapor Deposition
Materials Letters, Vol. 41 (October, 1999) pp. 16-19,
DOI: 10.1016/S0167-577X(99)00097-X