- H. Nagai, M. Hiramatsu, M. Hori, and T. Goto
Etching of Organic Low Dielectric Film in Ultrahigh Frequency Plasma Employing N2/H2 and N2/NH3 Gases
Journal of Applied Physics, Vol. 94 (3) (August, 2003) pp. 1362-1367,
DOI: 10.1063/1.1588351
- T. Ohta, K. Hara, T. Ishida, M. Hori, T. Goto, M. Ito, S. Kawakami, and N. Ishida
Measurement of Si, SiF, SiF2, Radicals and the SiF4 Molecule Using Very High Frequency Capacitively Coupled Plasma Employing SiF4
Journal of Applied Physics, Vol. 94 (3) (July, 2003) pp. 1428-1435,
DOI: 10.1063/1.1592011
- K. Fujita, M. Hori, T. Goto, and M. Ito
Environmentally benign etching process of amorphous silicon and tungsten using species evaporated from polytetrafluoroethylene and fluorinated ethylene propylene
Journal of Vacuum Science Technology A, Vol. 21 (1) (January, 2003) pp. 302-309,
DOI: 10.1116/1.1531131
- H. Nagai, M. Hiramatsu, M. Hori, and T. Goto
Measurement of Oxygen Atom Density Employing Vacuum Ultraviolet Absorption Spectroscopy with Microdischarge Hollow Cathode Lamp
Review of Scientific Instruments, Vol. 74 (7) (June, 2003) pp. 3453-3459,
DOI: 10.1063/1.1582386
- M. Hiramatsu, K. Kato, C. H. Lau, J. S. Foord, and M. Hori
Fabrication of Vertically Aligned Carbon Nanostructures by Microwave Plasma-Enhanced Chemical Vapor Deposition
Diamond and Related materials, Vol. 12 (3-7) (March-July, 2003) pp. 786-789,
DOI: 10.1016/S0925-9635(03)00028-1
- M. Hiramatsu, K. Kato, C. H. Lau, J. S. Foord, and M. Hori
Measurement of C2 Radical Density in Microwave Methane/Hydrogen Plasma Used for Nanocrystalline Diamond Film Formation
Diamond and Related materials, Vol. 12 (3-7) (March-July, 2003) pp. 365-368,
DOI: 10.1016/S0925-9635(02)00216-9
- K. Fujita, M. Hori, T. Goto, and M. Ito
Synthesis of polytetrafluoroethylene-like films by a novel plasma enhanced chemical vapor deposition employing solid material evaporation technique
Japanese Journal of Applied Physics, Vol. 42 (2A) (February, 2003) pp. 650-656,
DOI: 10.1143/JJAP.42.650
- H. Nagai, M. Hiramatsu, M. Hori, and T. Goto
Plasma Induced Subsurface Reactions for Anisotropic Etching of Organic Low Dielectric Film Employing N2 and H2 Gas Chemistry
Japanese Journal of Applied Physics, Vol. 42 (3A) (March, 2003) pp. L212-L214,
DOI: 10.1143/JJAP.42.L212
- H. Nagai, Y. Maeda, M. Hiramatsu, M. Hori, and T. Goto
Effect of Oxygen and Nitrogen Atoms on SiOCH Film Etching in Ultrahigh Frequency Plasma
Japanese Journal of Applied Physics, Vol. 42 (3B) (March 15, 2003) pp. L326-L 328,
DOI: 10.1143/JJAP.42.L326
- T. Ohta, M. Hori, T. Ishida, T. Goto, M. Ito, S. Kawakami, and N. Ishii
Effects of Driving Frequency on the Translation Temperature and Absolute Density of Si Atoms In Very High Frequency Capacitively Coupled SiF4 Plasma
Japanese Journal of Applied Physics, Vol. 42 (12B) (December, 2003) pp. L1532-L1534,
DOI: 10.1143/JJAP.42.L1532
- H. Nagai, M. Hori, T. Goto, T. Fujii, and M. Hiramatsu
Fabrication of Multilayered SiOCH Films with Low Dielectric Constant Employing Layer-by-Layer Process of Plasma Enhanced Chemical Vapor Deposition and Oxidation
Japanese Journal of Applied Physics, Vol. 42 (5A) (May 1, 2003) pp. 2775-2779,
DOI: 10.1143/JJAP.42.2775