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Nonequilibrium Atmospheric Pressure Plasma with Ultrahigh Electron Density and High Performance for Glass Surface Cleaning
Applied Physics Letters, Vol. 92 (8) (February, 2008) 081503 pp. 1-3,
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Electrical Conduction Control of Carbon Nanowalls
Applied Physics Letters, Vol. 92 (21) (May 28, 2008) 213103 pp. 1-3,
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Absolute Density and Temperature of O(1D2) in Highly Ar or Kr Diluted O2 Plasma
Applied Physics Letters, Vol. 93 (2) (July 14, 2008) 021501 pp. 1-3,
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- N. Nishizawa, and M. Hori
Octave Spanning High Quality Super Continuum Generation Using 10 nJ and 104 fs High Energy Ultrashort Soliton Pulse
Applied Physics Express, Vol. 1 (2) (February 15, 2008) 022009 pp. 1-2,
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New Compact Continuous Spectrum Light Source Using Atmospheric Pressure Microplasma with High-Velocity Ar Gas Flow
Applied Physics Express, Vol. 1 (10) (September 26, 2008) 106001 pp. 1-3,
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Roles of Oxidizing Species in a Nonequilibrium Atmospheric-pressure Pulsed Remote O2/N2 Plasma Glass Cleaning Process
Journal of Applied Physics, Vol. 103 (2) (January, 2008) 023303 pp. 1-7,
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Characteristics of Low Energy Atom and Molecule Beams Generated by the Charge Exchange Reaction
Journal of Applied Physics, Vol. 103 (5) (March, 2008) 053301 pp. 1-5,
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Plasma Damage Mechanisms for Low-k Porous SiOCH Films due to Radiation, Radicals, and Ions in the Plasma Etching Process
Journal of Applied Physics, Vol. 103 (7) (April 7, 2008) 073303 pp. 1-5,
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Fabrication of Carbon Nanowalls using Electron Beam Excited Plasma-Enhanced Chemical Vapor Deposition
Diamond and Related Materials, Vol. 17 (7-10) (July-October, 2008) pp. 1513-1517,
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Highly Reliable Growth Process of Carbon Nanowalls using Radical Injection Plasma-Enhanced Chemical Vapor Deposition
Journal of Vacuum Science Technology B, Vol. 26 (4) (August, 2008) pp. 1294-1300,
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Surface Reactions during Low-k Etching using N2/H2 Plasma
Journal of Vacuum Science Technology A, Vol. 26 (4) (July, 2008) pp. 870-874,
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Evaluation of Property Changes due to Radiation, Radicals, and Ions on Organic Low-k Films in H2/N2 Plasma Etching
Japanese Journal of Applied Physics, Vol. 47 (5) (May 16, 2008) pp. 3621-3624,
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Surface Modification Process of Contact Lens Using Three-Phase AC Excited Nonequilibrium Atmospheric Pressure Ar Plasma
Japanese Journal of Applied Physics, Vol. 47 (5) (May 16, 2008) pp. 3625-3629,
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Novel Silicon Wafer Slicing Technology Using Atmospheric-Pressure Reactive Microplasma
Japanese Journal of Applied Physics, Vol. 47 (7) (July 11, 2008) pp. 5648-5651,
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- Modeling & Simulation Working Group, Semiconductor Equipment Association of Japan
Analysis of Process Plasma via Computer Simulations and Plasma Diagnostics, for N2 Plasma and H2 Plasma
Journal of the Vacuum Society of Japan. 51 (12) (July 25, 2008) pp. 807-813,
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