- K. Teii, M. Hori, T. Goto
Dual-Electrode Biasing for Controlling Ion-to Adatom Flus rasio during Ion-Assisted Deposition of Diamond
Journal of Applied Physics, Vol. 89 (9) (April, 2001) pp. 4714-4718,
DOI: 10.1063/1.1359159
- S. Takashima, M. Hori, T. Goto, and K. Yoneda
Behavior of Hydrogen Atoms in Ultrahigh-Frequency Silane Plasmas
Journal of Applied Physics, Vol. 89 (9) (April, 2001) pp. 4727-4731,
DOI: 10.1063/1.1362414
- H. Ohta, A. Nagashima, M. Hori, T. Goto, and K. Yoneda
Effect of Ions and Radical on Formation of Silicon Nitride Gate Dielectric Film Using Plasma Chemical Vapor Depositon
Journal of Applied Physics, Vol. 89 (9) (April, 2001) pp. 5083-5087,
DOI: 10.1063/1.1337939
- M. Nakamura, M. Hori, T. Goto, M. Ito, and N. Ishii
Spatial Distribution of the Absolute Densities of CFx Radicals in Fluorocarbon Plasmas Determined from Single-Path Infrared Laser Absorption and Laser-Induced Fluorescence
Journal of Applied Physics, Vol. 90 (2) (June, 2001) pp. 580-586,
DOI: 10.1063/1.1337090
- H. Ohta, M. Hori, and T. Goto
Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4
Journal of Applied Physics, Vol. 90 (4) (August 15, 2001) pp. 1955-1961,
DOI: 10.1063/1.1381556
- S. Takashima, M. Hori, T. Goto, A. Kono, and K. Yoneda
Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas
Journal of Applied Physics, Vol. 90 (11) (December 1, 2001) pp. 5497-5503,
DOI: 10.1063/1.1410327
- S. Takashima, S. Arai, M. Hori, T. Goto, A. Kono, M. Ito, and K. Yoneda
Development of Vacuum Ultraviolet Absorption Spectroscopy Technique Employing Nitrogen Molecule Microdischarge Hollow Cathode lamp of Nitrogen Atoms in Process Plasmas
Journal of Vacuum Science Technology A, Vol. 19 (2) (March, 2001) pp. 599-602,
DOI: 10.1116/1.1340655
- M. Nakamura, M. Hori, T. Goto, M. Ito, and N. Ishii
Spatial distributions of the absolute CF and CF2 radical densities in high-density plasma employing low global warming potential fluorocarbon gases and precursors for film formation
Journal of Vacuum Science Technology A, Vol. 19 (5) (September, 2001) pp. 2134-2141,
DOI: 10.1116/1.1376708
- H. Nagai, M. Inayoshi, M. Hori, T. Goto, and M. Hiramatsu
On the mechanism of polytetrafluoroethylene ablation using a synchrotron radiation-induced photochemical process
Applleid Surface Science, Vol. 183 (3-4) (November 28, 2001) pp. 284-289,
DOI: 10.1016/S0169-4332(01)00592-X
- K. Teii, M. Hori, and T. Goto
Negative Bias Dependence of Surfur and Fluorine Incorporation in Diamond Films Etched by an SF6 Plasma
Journal of Electrochemical Society, Vol. 148 (2) (February, 2001) pp. G55-G58,
DOI: 10.1149/1.1339868
- K. Murata, Y. Mizutani, E. Iwasaka, S. Takashima, M. Hori, T. Goto, S. Samukawa, and T. Tsukada
Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma
Japanese Journal of Applied Physics, Vol. 40 (1AB) (January, 2001) pp. L4-L6,
DOI: 10.1143/JJAP.40.L4
- K. Fujita, S. Kobayashi, M. Ito, M. Hori, and T. Goto
Amorphous Silicon and Tungsten Etching Employing Environmentally Benign Plasma Process
Japanese Journal of Applied Physics, Vol. 40 (2A) (February, 2001) pp. 832-836,
DOI: 10.1143/JJAP.40.832
- M. Nakamura, M. Hori, T. Goto, M. Ito, and N. Ishii
Measurement of spatial distribution of SiF4 and SiF2 densities in high density SiF4 plasma using single-path infrared diode laser absorption spectroscopy and laser-induced fluorescence technique
Japanese Journal of Applied Physics, Vol. 40 (7) (July, 2001) pp. 4730-4735,
DOI: 10.1143/JJAP.40.4730