1. K. Teii, M. Hori, T. Goto
    Dual-Electrode Biasing for Controlling Ion-to Adatom Flus rasio during Ion-Assisted Deposition of Diamond
    Journal of Applied Physics, Vol. 89 (9) (April, 2001) pp. 4714-4718,
    DOI: 10.1063/1.1359159

  2. S. Takashima, M. Hori, T. Goto, and K. Yoneda
    Behavior of Hydrogen Atoms in Ultrahigh-Frequency Silane Plasmas
    Journal of Applied Physics, Vol. 89 (9) (April, 2001) pp. 4727-4731,
    DOI: 10.1063/1.1362414

  3. H. Ohta, A. Nagashima, M. Hori, T. Goto, and K. Yoneda
    Effect of Ions and Radical on Formation of Silicon Nitride Gate Dielectric Film Using Plasma Chemical Vapor Depositon
    Journal of Applied Physics, Vol. 89 (9) (April, 2001) pp. 5083-5087,
    DOI: 10.1063/1.1337939

  4. M. Nakamura, M. Hori, T. Goto, M. Ito, and N. Ishii
    Spatial Distribution of the Absolute Densities of CFx Radicals in Fluorocarbon Plasmas Determined from Single-Path Infrared Laser Absorption and Laser-Induced Fluorescence
    Journal of Applied Physics, Vol. 90 (2) (June, 2001) pp. 580-586,
    DOI: 10.1063/1.1337090

  5. H. Ohta, M. Hori, and T. Goto
    Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4
    Journal of Applied Physics, Vol. 90 (4) (August 15, 2001) pp. 1955-1961,
    DOI: 10.1063/1.1381556

  6. S. Takashima, M. Hori, T. Goto, A. Kono, and K. Yoneda
    Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas
    Journal of Applied Physics, Vol. 90 (11) (December 1, 2001) pp. 5497-5503,
    DOI: 10.1063/1.1410327

  7. S. Takashima, S. Arai, M. Hori, T. Goto, A. Kono, M. Ito, and K. Yoneda
    Development of Vacuum Ultraviolet Absorption Spectroscopy Technique Employing Nitrogen Molecule Microdischarge Hollow Cathode lamp of Nitrogen Atoms in Process Plasmas
    Journal of Vacuum Science Technology A, Vol. 19 (2) (March, 2001) pp. 599-602,
    DOI: 10.1116/1.1340655

  8. M. Nakamura, M. Hori, T. Goto, M. Ito, and N. Ishii
    Spatial distributions of the absolute CF and CF2 radical densities in high-density plasma employing low global warming potential fluorocarbon gases and precursors for film formation
    Journal of Vacuum Science Technology A, Vol. 19 (5) (September, 2001) pp. 2134-2141,
    DOI: 10.1116/1.1376708

  9. H. Nagai, M. Inayoshi, M. Hori, T. Goto, and M. Hiramatsu
    On the mechanism of polytetrafluoroethylene ablation using a synchrotron radiation-induced photochemical process
    Applleid Surface Science, Vol. 183 (3-4) (November 28, 2001) pp. 284-289,
    DOI: 10.1016/S0169-4332(01)00592-X

  10. K. Teii, M. Hori, and T. Goto
    Negative Bias Dependence of Surfur and Fluorine Incorporation in Diamond Films Etched by an SF6 Plasma
    Journal of Electrochemical Society, Vol. 148 (2) (February, 2001) pp. G55-G58,
    DOI: 10.1149/1.1339868

  11. K. Murata, Y. Mizutani, E. Iwasaka, S. Takashima, M. Hori, T. Goto, S. Samukawa, and T. Tsukada
    Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma
    Japanese Journal of Applied Physics, Vol. 40 (1AB) (January, 2001) pp. L4-L6,
    DOI: 10.1143/JJAP.40.L4

  12. K. Fujita, S. Kobayashi, M. Ito, M. Hori, and T. Goto
    Amorphous Silicon and Tungsten Etching Employing Environmentally Benign Plasma Process
    Japanese Journal of Applied Physics, Vol. 40 (2A) (February, 2001) pp. 832-836,
    DOI: 10.1143/JJAP.40.832

  13. M. Nakamura, M. Hori, T. Goto, M. Ito, and N. Ishii
    Measurement of spatial distribution of SiF4 and SiF2 densities in high density SiF4 plasma using single-path infrared diode laser absorption spectroscopy and laser-induced fluorescence technique
    Japanese Journal of Applied Physics, Vol. 40 (7) (July, 2001) pp. 4730-4735,
    DOI: 10.1143/JJAP.40.4730