1. M. Ito, K. Murata, K. Aiso, M. Hori, T. Goto, and M. Hiramatsu
    6.Scanning Tunneling Microscopic and Spectroscopics Characterization of Diamond Film Prepared by Capacitively Coupled Radio Frequency CH3OH Plasma with OH Radical Injection
    Applied Physics Letters, Vol. 70 (16) (June, 1998) pp. 2141-2143,
    DOI: 10.1063/1.118971

  2. M. Hori, R. G. Woodham, and H. Ahmed
    Sub-5 nm Gold Dot Formation Using Retarding-Field Single Ion Deposition
    Applied Physics Letters, Vol. 73 (22) (November, 1998) pp. 3223-3225,
    DOI: 10.1063/1.122725

  3. M. Shiratani, H. Kawasaki, T. Fukuzawa, Y. Watanabe, Y. Yamamoto, S. Suganuma, M. Hori, and T. Goto
    A Study on the Time Evolution of SiH3 Surface Loss Probability on Hydrogenated Amorphous Silicon Films in SiH4 Rf Discharges using Infrared Diode-Laser Absorption Spectroscopy
    Journal of Physics D: Applied Physics, Vol. 31 (7) (April, 1998) pp. 776-780,
    DOI: 10.1088/0022-3727/31/7/004

  4. M. Inayoshi, M. Ito, M. Hori, T. Goto, and M. Hiramatsu
    Surface Reaction of CF2 Radicals for Fluorocarbon Film Formation in SiO2/Si Selective Etching Process
    Journal of Vacuum Science Technology A, Vol. 16 (1) (June, 1998) pp. 233-238,
    DOI: 10.1116/1.580977

  5. M. Ikeda, M. Inayoshi, M. Hori, T. Goto, M. Hiramatsu, and A. Hirata
    Synchrotron Radiation Induced SiC Formation on Si Substrate Employing Methanol and H Radical
    Journal of Vacuum Science Technology A, Vol. 16 (4) (January, 1998) pp. 2252-2256,
    DOI: 10.1116/1.581335

  6. A. Kono, S. Hirose, K. Kinoshita, and T. Goto
    Translational Temperature Measurement for SiH2 in RF Silane Plasma using CW Laser Induced Fluorescence Spectroscopy
    Japanese Journal of Applied Physics, Vol. 37 (8) (August, 1998) pp. 4588-4589,
    DOI: 10.1143/JJAP.37.4588

  7. A. Kono, S. Hirose, and T. Goto
    Laser-Induced-Fluorescence Study of SiH2 in a RF SiH4/SiH2Cl2 Plasma
    The Review of Laser Engineering, Vol. 26 (6) (May, 1998) pp. 453-457,
    DOI: 10.2184/lsj.26.453