1. K. Maruyama, and T. Goto
    Variation of CF3, CF2 and CF radical densities with RF CHF3 discharge duration
    Journal of Physics D: Applied Physics, Vol. 28 (5) (May 14, 1995) pp. 884-887,
    DOI: 10.1088/0022-3727/28/5/009

  2. H. Nomura, K. Akimoto, A. Kono, and T. Goto
    Rate constants for the reactions of SiH and SiH2 with SiH4 in a low-pressure SiH4 plasma
    Journal of Physics D: Applied Physics, Vol. 28 (9) (September 14, 1995) pp. 1977-1982,
    DOI: 10.1088/0022-3727/28/9/027

  3. H. Nomura, K. Akimoto, A. Kono, and T. Goto
    Rate Constants for the Reactions of SiH and SiH2 with SiH4 in a Low-Pressure SiH4 Plasma
    Journal of Physics D: Applied Physics, Vol. 28 (September 14, 1995) p. 1977,
    DOI: 10.1088/0022-3727/28/9/027

  4. Koji Miyata, Kunimasa Takahashi, Shigeru Kishimoto, Masaru Hori, and Toshio Goto
    CFX (X=1-3) Radical Measurements in ECR Etching Plasma Employing C4F8 Gas by Infrared Diode Laser Absorption Spectroscopy
    Japanese Journal of Applied Physics, Vol. 34 (4A) (April, 1995) pp. L444-L447,
    DOI: 10.1143/JJAP.34.L444

  5. M. Inayoshi, M. Ikeda, M. Hori, T. Goto, M. Hiramatsu, and A. Hiraya
    High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
    Japanese Journal of Applied Physics, Vol. 34 (12B) (December, 1995) pp. L1675-L1677,
    DOI: 10.1143/JJAP.34.L1675

  6. Susumu Naito, Nobuei Ito, Tadashi Hattori, and Toshio Goto
    H 2 Partial Pressure Dependences of CH 3 Radical Density and Effects of H 2 Dilution on Carbon Thin-Film Formation in RF Discharge CH 4 Plasma
    Japanese Journal of Applied Physics, Vol. 34 (January, 1995) pp. 302-303,
    DOI: 10.1143/JJAP.34.302

  7. Akihiro Kono, Naoki Koike, Hideshi Nomura, and Toshio Goto
    Laser-Induced-Fluorescence Study of the SiH2 Density in RF SiH4 Plasmas with Xe, Ar, He, and H2 Dilution Gases
    Japanese Journal of Applied Physics, Vol. 34 (1) (January, 1995) pp. 307-311,
    DOI: 10.1143/JJAP.34.307

  8. M. Ikeda, M. Hori, T. Goto, M. Inayoshi, K. Yamada, M. Hiramatsu, and M. Nawata
    Synthesis of Diamond Using RF Magnetron Methanol Plasma Chemical Vapor Deposition Assisted by Hydrogen Radical Injection
    Japanese Journal of Applied Physics, Vol. 34 (5A) (May, 1995) pp. 2484-2488,
    DOI: 10.1143/JJAP.34.2484

  9. Masanobu Ikeda, Kokichi Aiso, Masaru Hori, and Toshio Goto
    CH3 Radical Density in Electron Cyclotron Resonance CH3OH and CH3OH/H2 Plasmas
    Japanese Journal of Applied Physics, Vol. 34 (6A) (June, 1995) pp. 3273-3277,
    DOI: 10.1143/JJAP.34.3273

  10. T. Goto
    Measurement of Radicals in Plasmas for Semiconductor Processing Using Laser Spectroscopic Techniques
    Journal Advanced Automation Technology, Vol. 7 (5) (1995) pp.284-288,
    DOI:

  11. M. Hiramatsu, M. Inayoshi, K. Yamada, T. Nakahira, M. Nawata, M. Hori, and T. Goto
    Plasma CVD Assisted by Slective Radical Source and Its Application to Synthesis of Diamond
    Rarefied Gas Dynamics 19, Vol. 1 (1995) pp. 671-677,
    DOI:

  12. M. Ikeda, M. Hori, T. Goto,M. Inayoshi, M. Hiramatsu, M. Nawata, and A. Hiraya
    SiC Nucleation on Si Substrate for Diamond Formation Using Synchrotron Radiation Enhanced Chemical Vapor Deposition Employing Methanol and H Radical
    BL-8A, UVSOR Activity Report 1994 (1995) pp. 192-193,
    DOI:

  13. K. Takahashi, M. Inayoshi, M. Hori, and T. Goto
    Control and Qualification of Precursor in SiH2 High Selective Etching Employing Radical Injection Technique
    The 17th Symposium on Dry Process, VIII-4 (1995) pp. 237-241,
    DOI:

  14. 後藤 俊夫
    ラジカル計測とプラズマ表面反応
    通研シンポジウム, 第33回 (1995) pp.109-116,
    DOI:

  15. 後藤 俊夫
    レーザー分光法によるプラズマ中のラジカル計測
    超精密加工専門委員会, 精密工学会 (1995) pp.107-112,
    DOI:

  16. 野村 秀次、河野 明広、後藤 俊夫
    RF SiH4プラズマ中の電子密度・温度に対する希釈ガスXe,Ar,He,H2の効果
    電気学会プラズマ研究会資料 EP-95 (107-128) (November 27, 1995) pp. 41-49,
    DOI: J-GLOBAL ID:200902155276827842