- K. Maruyama, and T. Goto
Variation of CF3, CF2 and CF radical densities with RF CHF3 discharge duration
Journal of Physics D: Applied Physics, Vol. 28 (5) (May 14, 1995) pp. 884-887,
DOI: 10.1088/0022-3727/28/5/009
- H. Nomura, K. Akimoto, A. Kono, and T. Goto
Rate constants for the reactions of SiH and SiH2 with SiH4 in a low-pressure SiH4 plasma
Journal of Physics D: Applied Physics, Vol. 28 (9) (September 14, 1995) pp. 1977-1982,
DOI: 10.1088/0022-3727/28/9/027
- H. Nomura, K. Akimoto, A. Kono, and T. Goto
Rate Constants for the Reactions of SiH and SiH2 with SiH4 in a Low-Pressure SiH4 Plasma
Journal of Physics D: Applied Physics, Vol. 28 (September 14, 1995) p. 1977,
DOI: 10.1088/0022-3727/28/9/027
- Koji Miyata, Kunimasa Takahashi, Shigeru Kishimoto, Masaru Hori, and Toshio Goto
CFX (X=1-3) Radical Measurements in ECR Etching Plasma Employing C4F8 Gas by Infrared Diode Laser Absorption Spectroscopy
Japanese Journal of Applied Physics, Vol. 34 (4A) (April, 1995) pp. L444-L447,
DOI: 10.1143/JJAP.34.L444
- M. Inayoshi, M. Ikeda, M. Hori, T. Goto, M. Hiramatsu, and A. Hiraya
High-Rate Anisotropic Ablation and Deposition of Polytetrafluoroethylene Using Synchrotron Radiation Process
Japanese Journal of Applied Physics, Vol. 34 (12B) (December, 1995) pp. L1675-L1677,
DOI: 10.1143/JJAP.34.L1675
- Susumu Naito, Nobuei Ito, Tadashi Hattori, and Toshio Goto
H 2 Partial Pressure Dependences of CH 3 Radical Density and Effects of H 2 Dilution on Carbon Thin-Film Formation in RF Discharge CH 4 Plasma
Japanese Journal of Applied Physics, Vol. 34 (January, 1995) pp. 302-303,
DOI: 10.1143/JJAP.34.302
- Akihiro Kono, Naoki Koike, Hideshi Nomura, and Toshio Goto
Laser-Induced-Fluorescence Study of the SiH2 Density in RF SiH4 Plasmas with Xe, Ar, He, and H2 Dilution Gases
Japanese Journal of Applied Physics, Vol. 34 (1) (January, 1995) pp. 307-311,
DOI: 10.1143/JJAP.34.307
- M. Ikeda, M. Hori, T. Goto, M. Inayoshi, K. Yamada, M. Hiramatsu, and M. Nawata
Synthesis of Diamond Using RF Magnetron Methanol Plasma Chemical Vapor Deposition Assisted by Hydrogen Radical Injection
Japanese Journal of Applied Physics, Vol. 34 (5A) (May, 1995) pp. 2484-2488,
DOI: 10.1143/JJAP.34.2484
- Masanobu Ikeda, Kokichi Aiso, Masaru Hori, and Toshio Goto
CH3 Radical Density in Electron Cyclotron Resonance CH3OH and CH3OH/H2 Plasmas
Japanese Journal of Applied Physics, Vol. 34 (6A) (June, 1995) pp. 3273-3277,
DOI: 10.1143/JJAP.34.3273
- T. Goto
Measurement of Radicals in Plasmas for Semiconductor Processing Using Laser Spectroscopic Techniques
Journal Advanced Automation Technology, Vol. 7 (5) (1995) pp.284-288,
DOI:
- M. Hiramatsu, M. Inayoshi, K. Yamada, T. Nakahira, M. Nawata, M. Hori, and T. Goto
Plasma CVD Assisted by Slective Radical Source and Its Application to Synthesis of Diamond
Rarefied Gas Dynamics 19, Vol. 1 (1995) pp. 671-677,
DOI:
- M. Ikeda, M. Hori, T. Goto,M. Inayoshi, M. Hiramatsu, M. Nawata, and A. Hiraya
SiC Nucleation on Si Substrate for Diamond Formation Using Synchrotron Radiation Enhanced Chemical Vapor Deposition Employing Methanol and H Radical
BL-8A, UVSOR Activity Report 1994 (1995) pp. 192-193,
DOI:
- K. Takahashi, M. Inayoshi, M. Hori, and T. Goto
Control and Qualification of Precursor in SiH2 High Selective Etching Employing Radical Injection Technique
The 17th Symposium on Dry Process, VIII-4 (1995) pp. 237-241,
DOI:
- 後藤 俊夫
ラジカル計測とプラズマ表面反応
通研シンポジウム, 第３３回 (1995) pp.109-116,
DOI:
- 後藤 俊夫
レーザー分光法によるプラズマ中のラジカル計測
超精密加工専門委員会, 精密工学会 (1995) pp.107-112,
DOI:
- 野村 秀次、河野 明広、後藤 俊夫
RF SiH4プラズマ中の電子密度・温度に対する希釈ガスXe,Ar,He,H2の効果
電気学会プラズマ研究会資料 EP-95 (107-128) (November 27, 1995) pp. 41-49,
DOI: J-GLOBAL ID：200902155276827842