- R. Nozawa, H. Takeda, M. Ito, M. Hori, and T. Goto
Substrate Bias Effects on Low Temperature Polycrystalline Silicon Formation Using Electron Cyclotron Resonance SiH4/H2 Plasma
Journal of Applied Physics, Vol. 81 (12) (June 15, 1997) pp. 8035-8039,
DOI: 10.1063/1.365408
- M. Ikeda, H. Ito, M. Hiramatsu, M. Hori, and T. Goto
Effects of H, OH, and CH3 Radicals on Diamond Film Formation in Parallel-Plate Radio Frequency Plasma Reactor
Journal of Applied Physics, Vol. 82 (8) (October 15, 1997) pp. 4055-4061,
DOI: 10.1063/1.365715
- K. Miyata, H. Arai, M. Hori, and T. Goto
Absolute Density Measurement of Cyanogen Fluoride in CHF3/N2 Electron Cyclotron Resonance Plasma Using Infrared Diode Laser Absorption
Journal of Applied Physics, Vol. 82 (10) (November 15, 1997) pp. 4777-4780,
DOI: 10.1063/1.366335
- K. Miyata, M. Hori, and T. Goto
CFx(X=1-3) Radical Densities During Si, SiO2, and Si3N4 Etching Employing Electron Cyclotron Resonance CHF3 Plasma
Journal of Vacuum Science Technology A, Vol. 15 (3) (May, 1997) pp. 568-572,
DOI: 10.1116/1.580685
- T. Fujii, T. Yokoi, M. Hiramatsu, M. Nawata, M. Hori, T. Goto, and S. Hattori
Low Dielectric Film Formation by Oxygen-Radical Polymerization of Laser-Evaporated Siloxane
Journal of Vacuum Science Technology B, Vol. 15 (3) (May, 1997) pp. 746-749,
DOI: 10.1116/1.589380
- S. Den, T. Kuno, M. Ito, M. Hori, T. Goto, P. Okeeffe, Y. Hayashi, and Y. Sakamoto
Influence on Selective SiO2/Si Etching of Carbon Atoms Produced by CH4 Addition to a C4F8 Permanent Magnet Electron Cyclotron Resonance
Journal of Vacuum Science Technology A, Vol. 15 (6) (November, 1997) pp. 2880-2884,
DOI: 10.1116/1.580843
- H. Ito, M. Ikeda, M. Ito, M. Hori, T. Takeo, H. Hattori, and T. Goto
Measurement of Carbon Atom Density in High Density Plasma Process
Japanese Journal of Applied Physics, Vol. 36 (7A) (July, 1997) pp. L880-L882,
DOI: 10.1143/JJAP.36.L880
- H. Ito, M. Ito, M. Hori, A. Kono, T. Takeo, T. Kato, and T. Goto
Measurement of Einsteins A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
Japanese Journal of Applied Physics, Vol. 36 (12A) (December, 1997) pp. L1616-L1618,
DOI: 10.1143/JJAP.36.L1616
- S. Den, P. OKeeffe, Y. Hayashi, M. Ito, M. Hori, T. Goto
Development and characterization of a new compact microwave radical beam source
Japanese Journal of Applied Physics, Vol. 36 (7B) (July, 1997) pp. 4588-4592,
DOI: 10.1143/JJAP.36.4588
- T. Hayashi, A. Kono, and T. Goto
Behavior of Electrons and Negative Ions in a Capacitively-Coupled Radio-Frequency NF3/Ar Plasma
Japanese Journal of Applied Physics, Vol. 36 (7B) (July, 1997) pp. 4651-4655,
DOI: 10.1143/JJAP.36.4651
- Y. Yamamoto, S. Suganuma, M. Ito, M. Hori, and T. Goto
Effects of Dilution Gases on Si Atoms and SiHx+(x=0-3) Ions in Electron Cyclotron Resonance SiH4 Plasmas
Japanese Journal of Applied Physics, Vol. 36 (7B) (July, 1997) pp. 4664-4669,
DOI: 10.1143/JJAP.36.4664
- H. Kawasaki, H. Ohkura, T. Fukuzawa, M. Shiratani, Y. Watanabe, Y. Yamamoto, S. Suganuma, M. Hori, and T. Goto
Roles of SiH3 and SiH2 Radicals in Particle Growth in RF Silane Plasmas
Japanese Journal of Applied Physics, Vol. 36 (7B) (July, 1997) pp. 4985-4988,
DOI: 10.1143/JJAP.36.4985
- K. Miyata, M. Hori, and T. Goto
Kinetics of Radicals in CF4 and C4F8 Electron Cyclotron Resonance Plasmas
Japanese Journal of Applied Physics, Vol. 36 (7B) (August, 1997) pp. 5340-5345,
DOI: 10.1143/JJAP.36.5340