T. Fujii, T. Yokoi, M. Hiramatsu, M. Nawata, M. Hori, T. Goto, and S. Hattori. Oxygen-Radical-Enhanced Polymerization of Siloxane Oligomers for Preparation of Polysiloxane Thin Films as Low-Dielectric-Constant Interlayer Dielectric, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 53-54 (
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K. Miyata, H. Arai, T. Kuno, M. Hori, and T. Goto. Generation Process of Fluorocarbon Radicals in ECR-CF4 and C4F8 Plasmas, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 63-64 (
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R. Nozawa, M. Ito, M. Hori, and T. Goto. Low Temperature Polycrystalline Silicon Formation by Neutral Reactive Species in Electron Cyclotron Resonance SiH4/H2 Plasma Chemical Vapor Deposition, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 132-133 (
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M. Ikeda, H. Ito, M. Ito, K. Murata, M. Hori, M. Hiramatsu, and T. Goto. Behavior of CH3 Radical in Parallel-Plate RF CH3OH Plasma with H and OH Radical Injection and Surface Characterization of Synthesized Diamond Film, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 295-296 (
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H. Kawasaki, H. Ohkura, T. Fukuzawa, M. Shiratani, Y. Watanebe, Y. Yamamoto, S. Suganuma, M. Hori, and T. Goto. Study of Growth Processes for Particles in rf SiH4 Plasmas, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 351-352 (
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S. Den, M. Ikeda, H. Muto, M. Ito, M. Hori, and T. Goto. Development and Characterization of a Microwave Radical Beam Source, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 421-422 (
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T. Hayashi, A. Kono, and T. Goto. Behavior of the Electron and Negative Ion Densities in a Radio-Frequency NF3/Ar Plasma, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 433-434 (
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Y. Yamamoto, S. Suganuma, M. Ito, M. Hiramatsu, M. Hori, and T. Goto. Effects of Dilution Gases on Si Atom and SiHx+ (x=0-3) Ions in ECR SiH4 Plasma, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 449-450 (
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H. Ito, M. Ikeda, M. Ito, M. Hori, T. Takeo, H. Hattori, and T. Goto. Measurement of Carbon Radical Density in High Density Plasma Process, Proc. 3rd International Conference on Reactive Plasmas and 14th Symposium on Plasma Processing (ICRP-3/SPP-11), Nara, Japan, January, 1997. pp. 453-454 (
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M. Hori, M. Inayoshi, M. Ito, M. Hiramatsu, and T. Goto. Surface Reaction of CF2 Radicals in Silicon Oxide Selective Etching Process, International Workshop on Basic Aspects of Nonequilibrium Plasmas Interacting with Surfaces (BANPIS 1997), Shirahama, Japan, January, 1997. pp. 11-12 (
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M. Ito, H. Ito, M. Ikeda, M. Hori, H. Hattori, and T. Goto. Measurement of Carbon Radical Density in ECR and ICP Plasma Processes, 191st Spring Meeting of The Electrochemical Society (ECS), Montreal, Quebec, Canada, May, 1997. Vol. 271, pp. 342 (
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M. Ito, H. Ito, M. Ikeda, M. Hori, H. Hattori, and T. Goto. The Roles of Atomic Carbon for High Selective SiO2/Si Etching in Permanent Magnet in Permanent Magnet ECR C4F8/CH4 Plasma, Microprocesses and Nanotechnology 1997, Nagoya, Japan, July, 1997. Vol. 10B-6-1, pp. 182-183 (
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R. Nomura, A. Rahwanto, Y. Kondo, M. Mori, T. Goto, and H. Nishimoto. New Scheme of Amplitude Modulated Harmonically Mode-Locked Er-Doped Fiber Ring Lasers, 2nd Optoelectronics and Communication Conference (OECC 97), Seoul, Korea, July, 1997. 9D5-3 (
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R. Goto, K. Matsui, H. Kasuya, M. Mori, T. Goto, and H. Nishimoto. Analysis of Source Wavelength Dependence of Modulation Frequency Responses of LD's Measured with Active Layer Photomixing Technique, 2nd Optoelectronics and Communication Conference (OECC 97), Seoul, Korea, July, 1997. 10C4-3 (
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N. Nishizawa, Y. Matsuo, M. Mori, T. Goto, and H. Nishimoto. Analysis of Pulsed Squeezing in Optical Fibers with Guided Acoustic Wave Brillouin Scattering, 2nd Optoelectronics and Communication Conference (OECC 97), Seoul, Korea, July, 1997. 10EP-16 (
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M. Hashiura, N. Nishizawa, M. Mori, T. Goto, and H. Nishimoto. Experiment of Quadrature Squeezed Light Generation and Detection with Phase Tunable PBS Fiber Loop Mirror, 2nd Optoelectronics and Communication Conference (OECC 97), Seoul, Korea, July, 1997. 11D1-3 (
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K. Fujita, M. Inayoshi, M. Ito, M. Hori, and T. Goto. Development of Novel CF2 Radical Source by Using Laser Ablation of PTFR, 50th Annual Gaseous Electronics Conference (GEC), Madison, Wisconsin, USA, October, 1997. DMP2-4 (
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T. Fujii, M. Hiramatsu, M. Nawata, M. Hori, T. Goto, and S. Hattori. Downflow Plasma-Enhanced Chemical Vapor Deposition Using Hexamethyldisloxane for Preparation of Low Diselectric Constant Interlayer Dielectrics, 50th Annual Gaseous Electronics Conference (GEC), Madison, Wisconsin, USA, October, 1997. JTP3-11 (
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H. Ito, M. Ito, M. Hori, A. Kono, T. Takeo, H. Hattori, and T. Goto. Measurement of Einstein's A Coefficient of Transition Line at 296.7 nm for Carbon Atom, 50th Annual Gaseous Electronics Conference (GEC), Madison, Wisconsin, USA, October, 1997. MW2-4 (
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M. Nakamura, H. Arai, K. Miyata, M. Ito, M. Hori, and T. Goto. Measurement of Absolute Densities of SiFx in Electron Cyclotron Resonance SiF4 Plasma, 50th Annual Gaseous Electronics Conference (GEC), Madison, Wisconsin, USA, October, 1997. OWP2-23 (
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Y. Yamamoto, R. Yoshida, M. Ito, M. Hori, T. Goto, S. Samukawa, and T. Tsukada. Measurement of Si Atom Density in Ultra High Frequency Discharge Silane Plasma, 50th Annual Gaseous Electronics Conference (GEC), Madison, Wisconsin, USA, October, 1997. OWP2-24 (
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H. Noda, H. Nagai, M. Hiramatsu, M. Nawata, M. Hori, and T. Goto. Diamond Film Formation Using a Low Pressure Radio Frequency Inductively Coupled Plasma, 50th Annual Gaseous Electronics Conference (GEC), Madison, Wisconsin, USA, October, 1997. OWP2-26 (
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K. Miyata, H. Arai, M. Ito, M. Hori, and T. Goto. Absolute Density Measurement of FCN in CHF3 ECR Plasma Etching of Si3N4, 50th Annual Gaseous Electronics Conference (GEC), Madison, Wisconsin, USA, October, 1997. PR2-3 (
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A. Kono, S. Hirose, T. Goto, and K. Kinoshita. Laser-Induced Fluorescence Measurement of SiH2 in Silane Plasmas Using a CW Ring Dye Laser, 50th Annual Gaseous Electronics Conference (GEC), Madison, Wisconsin, USA, October, 1997. OWP4-6 (
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R. Nozawa, H. Takeda, M. Nakamura, K. Murata, M. Ito, M. Hori, and T. Goto. In Situ Observation of Hydrogenatad Amorphous Silicon Surface During Electron Cyclotron Resonance Hydrogen Plasma Annealing Using Polarization Modulation Infrared Reflection Absorption Spectroscopy, 44th International Symposium of American Vacuum Society (AVS), San Jose, California, USA, October, 1997. TF-MoP16 (
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H. Ito, M. Ito, M. Ishikawa, M. Hori, T. Goto, T. Takeo, and T. Kato. Behaviors of Carbon Atom Density in Hydrocarbon and Hydrocarhon and Fluorecarbon Plasmas, 1st Asia-Pacific International Symposium on the Basic and Application of Plasma Technology (APSPT), National Yunlin University of Science and Technology, Touliu, Taiwan, December 15-16, 1997. EP-97-105 (
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