M. Hori, and T. Goto (Invited) (INVITED
) Measurement Techniques of Radicals and Their Gas Phase and Surface Reactions in Plasma Processes International Workshop on Basis for Low Temperature Plasma Applications: Charged and Neutral Particle Transport in Gas Phase an in Plasma/Surface Interface, Hakone, Japan, July, 2001
M. Hori, and T. Goto (Invited) (INVITED
) Synthesis of Highly Oriented Microcrystalline Silicon Films in Pulse-Time-Modulated Ultrahigh-Frequency Silane Plasmas, 54th Annual Gaseous Electronics Conference (GEC), Pennsylvania, USA, October, 2001. p. 49
General
T. Goto, and N. Nishizawa . Widely wavelength tunable ultrashort pulse generaiton using optical fibers and fiber lasers , FSRC2001, Science and Technology of Optical Fibers, La Jolla, USA, May, 2001. (
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M. Nakamura, K. Hara, M. Ito, M. Hori, T. Goto, and N. Ishii. Spatial Distribution Measurement of SiF4 and SiF2 Densities in Electron Cyclotron Resonance SiF4 Plasma, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 41-42 (
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K. Hara, M. Nakamura, M. Ito, M. Hori, T. Goto, and N. Ishii. Behavior of Carbon Atom in Low-k Film Formation Using Electron Cyclotron Resonance C4F6, C3F6 and C4F8 Plasmas, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 31-32 (
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S. Senda Takumi Shiomi, K. Fujita, M. Hori, and T. Goto. Behavior of CFx(X=1-2) Radicals at Near Surface and Etching Characteristics of SiO2 and Si in ECR C4F8/Ar Plasma, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 35-36 (
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S. Tada, S. Takashima, M. Ito, Manabu Hamagaki, M. Hori, and T. Goto. Deposition of DLC Films Using Multi-Hole-Grid Electron-Beam Excited Plasma, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 111-112 (
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Hikaru Funakoshi, K. Teii, S. Takashima, H. Ito, M. Hori, T. Takeo, and T. Goto. Control of Ion and Radical Fluxes in the Limitation of Low-Pressure Diamond Formation, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 33-34 (
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K. Murata, Daisuke Kikukawa, M. Ito, M. Hori, and T. Goto. Effects of Seed Layers on Properties of Microcrystalline Silicon Thin Films Formed by Remote Electron Cyclotron Resonance Silane Plasma, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 49-50 (
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M. Hori, S. Takashima T. Goto, and K. Yoneda. Absolute Hydrogen Atom Density Measurements in Inductively Coupled Methane and Hydrogen Plasmas, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 61-62 (
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S. Takashima, M. Hori, T. Goto, and K. Yoneda. Behavior of Hydrogen Atoms in Inductively Coupled Methane and Hydrogen Plasma, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 63-64 (
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H. Ohta, M. Hori, and T. Goto. Effects of Fluorine for Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by PECVD Employing NH3 and SiF4, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 65-66 (
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M. Hori, K. Teii, Hikaru Funakoshi, T. Takeo, and T. Goto. Initial Growth Process of Diamond Formation in Low-Pressure Inductively Coupled Plasma, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 103-104 (
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M. Ito, S. Senda, M. Hori, and T. Goto. Study of Reaction Layer on Silicon Nitride in Highly Selective Etching Process of Silicon Oxide over Silicon Nitride, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 113-114 (
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Takumi Shiomi, M. Hiramatsu, M. Nawata, K. Fujita, M. Hori, and T. Goto. Measurement of CH3 Radicals in a Low-Pressure Microwave Plasma Using Infrared Diode Laser Absorption Spectroscopy, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 115-116 (
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H. Ito, Hikaru Funakoshi, K. Teii, M. Ito, M. Hori, T. Takeo, and T. Goto. Microcrystalline Diamond Film Formation in Low-Pressure Inductively Coupled Plasma Using Di-t-alkyl Peroxide, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 143-144 (
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Y. Mizutani, Emi Iwasaka, Miho Matsutani, K. Murata, S. Takashima, M. Hori, T. Goto, S. Samukawa, and T. Tsukada. Kinetics of Hydrogen Atoms in JHF SiH4/H2 Plasma for High Microcrystalline silicon Thin Films Formation, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 51-5 (
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Emi Iwasaka, Y. Mizutani, Miho Matsutani, K. Murata, S. Takashima, M. Hori, and T. Goto. Formation of Preferentially Oriented Microcrystalline Silicon Thin Films in Pulse Modulated UHF Plasma CVD, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 47-48 (
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Daisuke Kikukawa, K. Murata, M. Hori, and T. Goto. Microcrystalline Silicon Thin Film Formation Using a Low Pressure Microwave Plasma, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 47-48 (
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Miho Matsutani, Emi Iwasaka, Y. Mizutani, K. Murata, M. Hori, T. Goto, S. Samukawa, and T. Tsukada. Title, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 59-60 (
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H. Nagai, S. Takashima, Toshiyuki Tanaka, M. Hiramatsu, M. Hori, and T. Goto. Measurement of O Atom Density Employing Vacuum Ultraviolet Absorption Spectroscopy with Microdischarge Hollow-Cathode Lamp, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 37-38 (
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Toshiyuki Tanaka, H. Nagai, M. Ito, M. Hori, and T. Goto. Effect of Molecular Structure of Feed Gases on Oxide Etching Using UHF Fluorocarbon Plasma, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 29-30 (
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K. Fujita, M. Hori, and T. Goto. SiO2 Fine Contact Hole Etching Process by CxFy/Ar Plasma Employing Solid Material Evaporation Technique, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 2, pp. 25-26 (
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Reiji Morioka, H. Ohta, M. Hori, and T. Goto. Formation of SiNx:F Gate Dielectric Films Using ECR-PECVD Employing N2/SiF4/H2 Gases, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 1, pp. 189-190 (
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H. Nagai, S. Takashima, T. Tanaka, M. Hiramatsu, M. Hori, and T. Goto. Behavior of N, H Radicals and Etching of Organic Low-k Film Employing N2/H2 and N2/NH3 Plasmas, Proceedings of XXV International Conference on Phenomena in Ionized Gases, Nagoya, Japan, July, 2001. Vol. 1, pp. 187-188 (
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N. Nishizawa, M. Yoshida, and T. Goto. Generation and characterization of 1.1-2.1 um widely broadened super continuum in highly nonlinear dispersion shifted fibers, Conference on Lasers and Electro-Optics (CLEO/Pacific Rim 2001), Makuhari, Japan, July, 2001. ThJ2-4, vol.2, p. 730 (
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J. Higuchi, N. Nishizawa, T. Goto, M. Mori, and K. Yamane. Analysis of photon-number squeezed light generation using nonlinear polarization interferometer, Conference on Lasers and Electro-Optics (CLEO/Pacific Rim 2001), Makuhari, Japan, July, 2001. WG2-7, vol.2, p. 424 (
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Reiji Morioka, H. Ohta, M. Hori, and T. Goto. Synthesis of Fluorinated SiNx Gate Dielectric Film Using ECR-PECVD Employing N2/H2/SiF4 Gases, Proceedings of 2001 International Conference on Solid State Device and Materials, Tokyo Japan, September, 2001. pp. 506-507 (
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H. Nagai, M. Hiramatsu, M. Hori, and T. Goto. Organic Low-k Film Etching in Inductively Coupled Plasma Employing N2/H2 and N2/NH3 Gases, 48th International Symposium American Vacuum Society (AVS), San Francisco, USA, October-November, 2001. p. 161 (
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Kohei Ito, K. Kato, M. Hiramatsu, M. Nawata, M. Hori, Chi H. Lau, and John S. Foord. Radical Reaction Mechanism of Organic Low-k Film Etching Employing N-H Plasmas, Proceedings of Frontiers of Surface Engineering 2001 Conference and Exhibition, Nagoya, Japan, October-November, 2001. p. 109 (
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H. Nagai, Yoritsugu Maeda, M. Hiramatsu, M. Hori, and T. Goto. Radical Reaction Mechanism of Organic Low-k Film Etching Employing N-H Plasmas, Proceedings of Frontiers of Surface Engineering 2001 Conference and Exhibition, Nagoya, Japan, October-November, 2001. p. 357 (
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K. Fujita, M. Hori, and T. Goto. Generation of Fluorocarbon Species Using Rapid Thermal Evaporation Technique for Semiconductor Device Process, Proceedings of 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Device, Ise-Shima, Japan, November, 2001. 6.4, pp. 61-62 (
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Daisuke Kikukawa, K. Honma, M. Hori, and T. Goto. Synthesis of Microcrystalline Silicon Thin Films Using a Low-Pressure Microwave Plasma, Proceedings of 2001 International Microprocess and Nanotechnology Conference, Matsue, Japan, November, 2001. pp. 116-117 (
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H. Nagai, Yoritsugu Maeda, M. Hiramatsu, M. Hori, and T. Goto. Etching of Organic Low-k Film in ICP and UHF Plasma Employing N2/H2 and N2/NH3 Gases, 23rd International Symposium on Dry Process (DPS), Tokyo, Japan, November, 2001. pp. 147-152 (
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K. Fujita, Mikio Nagai, Akira Suzuki, M. Ito, M. Hori, and T. Goto. Development of Environmentally Benign Silicon Oxide Etching Process and novel Zero-Emission PFC Abatement System, 23rd International Symposium on Dry Process (DPS), Tokyo, Japan, November, 2001. pp. 229-234 (
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Yoritsugu Maeda, H. Nagai, Toshiyuki Tanaka, M. Hori, and T. Goto. Silicon Oxide Selective Etching Process in UHF Plasma Employing Low Global Warming Potential Gases, 23rd International Symposium on Dry Process (DPS), Tokyo, Japan, November, 2001. pp. 279-284 (
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