Invited talk

  1. T. Goto, and M. Hori (INVITED )
    Surface Reaction for Low Temperture Formation of Ultrathin Silicon Nitride Gate Dielectric Film Employing Plasma Enhanced Chemical Vapor Depositon,
    Proceedings of Internatinal Workshop on Basic Aspect of Non-equilium Plasmas Interacting with Surface (BANPIS), Nagasaki, Japan, January 28-30, 2000. O2-2, pp. 9-10



General

  1. N. Nishizawa, T. Goto, H. Nagai, and T. Goto.
    1.3-2.0 μm Widely Wavelength Tunable Compact Ultrashort Pulse Source Using Optical Fibers,
    Conference on Lasers and Electro-Optics (CLEO2000), San Fransisco, USA, May 7-12, 2000. CWK10, p. 301 ( )

  2. N. Nishizawa, A. Muto, K. Yamate, and T. Goto.
    Wideband Measurement of Chromatic Dispersion in Optical Fibers Using Compact System of Wavelength Tunable Ultrashort Pulses,
    5th Optoelectronics and Communication Conference(OECC2000), Chiba, Japan, July 10-14, 2000. 14C4-2, pp. 550-551 ( )

  3. J. Higuchi, N. Nishizawa, T. Goto, M. Mori, and K. Yamate.
    Analysis of Photon Number Squeezed Light Generation Using Asymmetric PBS Fiber Loop Mirror,
    5th Optoelectronics and Communication Conference(OECC2000), Chiba, Japan, July 10-14, 2000. 14C-4-6, pp. 558-559 ( )

  4. M. Hori, K. Fujita, S. Kobayashi, M. Ito, and T. Goto.
    Environmentally Harmonized Plasma Etching Processes of Amorphous Silicon and Tungsten,
    2000 International Microprocess and Nanotechnology Conference, , 2000. 3B-9-2, p. 268 ( )

  5. H. Ohta, M. Hori, and T. Goto.
    Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by Plasma Enhanced Chemical Vapor Deposition Employing NH3 and SiF4,
    2000 International Conference on Solid State Devices and Materials, Sendai, Japan, August 29-31, 2000. A-5-3, pp. 180-181 ( )

  6. K. Murata, Y. Mizutani, M. Hori, T. Goto, S. Samukawa, and T. Tsukada.
    Initial Growth Stage of Polycrystalline Silicon Films Formation Using UHF SiH4/H2 Plasma
    5th Asia-Pacific Conference on Plasma Science and Technology 13th Symposiumon Plasma Science for Materials, China, September, 2000. ( )

  7. H. Ohta, M. Hori, and T. Goto.
    High-Quality Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Prepared by Plasma Enhanced Chemical Vapor Depositon Employing NH3 and SiF4,
    47th International Symposium of American Vacuum Society (AVS), Boston, USA, October 2-6, 2000. DI+EL+MS-WeA7, pp. 159 ( )

  8. K. Fujita, M. Ito, M. Hori, and T. Goto.
    Silicon Oxide Contact Hole Etchng Process Employing Environmentally Harmonized Technique,
    47th International Symposium of American Vacuum Society (AVS), Boston, USA, October 2-6, 2000. IE+PS+MS+SE-WeM4, p. 114 ( )

  9. M. Ito, S. Senda, K. Kamiya, M. Hori, and T. Goto.
    Etching Mechanism of Silicon Ntride Film in Self-aligned Contact Etching Process,
    47th International Symposium of American Vacuum Society (AVS), Boston, USA, October 2-6, 2000. PS2-ThA5, p. 218 ( )

  10. M. Nakamura, K. Teii, S. Takashima, M. Hori, T. Goto, and N. Ishii.
    Correlation between Gas Phase and Substrate Surface on Fabrication of Low-k Films in ECR Plasma with G4F8 and Perfluorocarbon-Replacement Gases,
    53rd Annual Gaseous Electronics Conference (GEC), Houston, USA, October 24-27, 2000. ETP57, p. 30 ( )

  11. S. Takshima, M. Hori, T. Goto, and K. Yoneda.
    Studies on Absolute H Atom Density in Material PlasumaProcesses Using Vacuum Ultraviolet Absorption Spectrascopy Employing Microplasma,
    53rd Annual Gaseous Electronics Conference (GEC), Houston, USA, October 24-27, 2000. QF2 2, p. 72 ( )

  12. H. Ito, K. Teii, H. Funakoshi, M. Hori, T. Goto, M. Ito, and T. Takeo.
    Loss Kinetics of Carbon Atoms in Diamond Depositon Employing Low-Pressure Inductively Coupled Plasma,
    53rd Annual Gaseous Electronics Conference (GEC), Houston, USA, October 24-27, 2000. MR2 5, p. 65 ( )

  13. H. Nagai, S. Takashima, T. Tanaka, K. Teii, M. Hiramatsu, M. Hori, and T. Goto.
    Etching of Organic Low-k Film in High-Density Plasma Employing N-H Gases and Its Radical Raction Mechanism,
    22nd Dry Process Symposium (DPS), Tokyo, Japan, November 9-10, 2000. VI-6, pp. 269-274 ( )

  14. M. Nakamura, M. Hori, H. Ito, and T. Goto.
    Measurement of Spatial Distribution of Radicals and Formation of Low-k Films Employing ECR Plasma CVD,
    2nd International Workshop on Development of Thin Films for Future ULSIs and Noano-Scale Process Intergration, Ise-Shima, Japan, November 19-24, 2000. P-21, pp. 243-246 ( )

  15. H. Ohta, M. Hori, and T. Goto.
    High-Quality Ultrathin Fluorinated Silicon Nitride Gate Dielectric Films Formed by PECVD Employing NH3 and SIF4,
    2nd International Workshop on Development of Thin Films for Future ULSIs and Noano-Scale Process Intergration, Ise-Shima, Japan, November 19-24, 2000. P-18, pp. 231-234 ( )

  16. K. Fujita, M. Ito, M. Hori, and T. Goto.
    Formation of Polytetrafluoroethylene - like Low-k Films Employing Environmentally Benign Plasma CVD Process,
    2nd International Workshop on Development of Thin Films for Future ULSIs and Noano-Scale Process Intergration, Ise-Shima, Japan, November 19-24, 2000. P-20, pp. 239-242 ( )

  17. M. Hori, K. Fujita, and T. Goto.
    Environmentally Benign Etching - Process for a-Si, W and SiO2 Materials in ULSIs,
    2nd International Workshop on Development of Thin Films for Future ULSIs and Noano-Scale Process Intergration, Ise-Shima, Japan, November 19-24, 2000. P-21, pp. 141-144 ( )

  18. M. Hori, H. Nagai, S. Takashima, and T. Goto.
    Dry Etching of Organic Liw-k Films Employing High Density Plasmas and Its Diagnostics of Radicals,
    2nd International Workshop on Development of Thin Films for Future ULSIs and Noano-Scale Process Intergration, Ise-Shima, Japan, November 19-24, 2000. P-22, pp. 247-250 ( )

  19. M. Hori, S. Senda, M. Ito, and T. Goto.
    Etching Mechanism of Silicon Oxide over Silicon Nitride in ECR C4F8 Plasma Employing in-situ FT-IR RAS and in-situ XPS,
    2nd International Workshop on Development of Thin Films for Future ULSIs and Noano-Scale Process Intergration, Ise-Shima, Japan, November 19-24, 2000. P-23, pp. 251 ( )

  20. M. Hori.
    Diagnostics of Neutral Species and Insight into the Surface Reaction in High-Density Fluorocarbon Plasma Process(Invite)
    5th Internatinol Workshop on Advanced Plasma Tool and Process Engineering, Santa Clara, USA, 2000. ( )

  21. M. Hori, M. Nakamura, M. Ito, and T. Goto.
    Behaviors of CFx(x=1-3) Radicals and Polymeric Species in High-Density Fluorocarbon Plasmas(Invited)
    3rd International Workshop on Fluorocarbon Plasma, Sarcenas, France, 2000. ( )

  22. S. Tada, S. Takashima, S. Tada, A. Kono, and T. Goto.
    Nitrogen Atoms in a Compact Electron Beam Excited Plasma,
    Proceedings of XV th Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, Miskolc-Lillafured, Hungary, 2000. pp. 390-391 ( )

  23. M. Hori, S. Takashima, S. Tada, A. Kono, and T. Goto.
    Absolute Density Measurement of Hydrogen and Nitrogen Atoms in High Density Reactive Plasma Using Vacuum Ultraviolet Absorption Spectroscopy Employing a Microcharge Hollow-Cathode Lamp,
    Proceedings of XV th Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, Miskolc-Lillafured, Hungary, 2000. pp. 322-323 ( )

  24. K. Teii, H. Funakoshi, H. Ito, M. Hori, T. Takeo, and T. Goto.
    Depression of Pressure Limit of Diamond Growth in an Inductively Coupled Plasma
    2000 Fall Meeting of Materials Research Society (MRS), Boston USA, 2000. ( )